Avalanche Photodetector

Avalanche Photodetectors (APDs) utilize internal gain mechanisms to enhance sensitivity. A high reverse bias voltage is applied to the avalanche diode to generate a strong electric field. When an incident photon generates an electron-hole pair, the electric field accelerates the electrons, leading to the production of secondary electrons through impact ionization. The resulting electron avalanche produces a gain factor of several hundred, represented by the multiplication factor M. APDs are suitable for applications with low optical power levels. LBTEK offers APDs with a wavelength range covering 200–1700 nm, available in two gain types: adjustable gain and fixed gain. The input options include fiber-optic and free-space configurations, fully adapting to different application scenarios.