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DInGaAs-TE Series TE-Cooled InGaAs Detectors, 800–2600 nm, -40 °C

DInGaAs-TE Series
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Two-stage TE-cooled InGaAs detectors for low-noise near-infrared measurements from 0.8 to 2.6 µm.

DInGaAs-TE series detectors use two-stage thermoelectrically cooled InGaAs photodiodes for the 0.8–2.6 µm range. The DInGaAs1700-TE and DInGaAs2600-TE share the same construction with a 3 mm diameter active area; the sensor is held at -40 °C with ±0.5 °C stability by the ZTC temperature controller.

Key Features

  • Two models covering 800–1700 nm and 800–2600 nm
  • Two-stage TE cooling to -40 °C, temperature stability ±0.5 °C
  • Ø3 mm active area on both models
  • Typical NEP of 3.2×10⁻¹⁵ (DInGaAs1700-TE) and 5.5×10⁻¹³ (DInGaAs2600-TE)
  • Current output; the ZAMP I-V transimpedance amplifier is recommended before an oscilloscope, lock-in amplifier or the DCS103
  • Can be read directly by the DCS300PA data acquisition system, which has built-in amplification
  • In cooled mode, operation requires the ZTC temperature controller

Typical Applications

  • Low-light near-infrared spectroscopy
  • NIR photoluminescence measurements
  • Transmission and absorption measurements from 0.8 to 2.6 µm
  • Lock-in detection with scanning monochromators

Model Overview

Model Spectral Range (nm) Peak Responsivity (A/W) D* (typ.) NEP (typ.)
DInGaAs1700-TE 800–1700 0.9 8.4×10¹³ 3.2×10⁻¹⁵
DInGaAs2600-TE 800–2600 1.2 4.9×10¹¹ 5.5×10⁻¹³

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Models: DInGaAs1700-TE, DInGaAs2600-TE · Contact WaveQuanta for a quote, configuration advice and lead time.

Detector Type Two-stage TE-cooled InGaAs photodiode
Active Area Diameter 3 mm
Spectral Range 800–1700 nm or 800–2600 nm, depending on model
Detector Operating Temperature -40 °C
Temperature Stability ±0.5 °C
Ambient Temperature +10 to +40 °C
Signal Output Current
Output Signal Polarity P (positive)
Temperature Controller ZTC (required in cooled mode)
Recommended Preamplifier ZAMP I-V transimpedance amplifier
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