
DSi Series Silicon Photodetectors, 200–1100 nm, 100 mm² Active Area
DSi SeriesDesign Tools
Silicon photodiode detectors that mount directly on monochromator slits for UV–NIR measurements at good light levels.
DSi series detectors are rugged silicon photodiodes for measurements where a reasonable amount of light is collected. Each detector sits in a housing with a BNC signal connector and a mounting flange that attaches directly to the slit assembly of Omni-λ series monochromators. The DSi200 is UV-enhanced for 200–1100 nm, while the DSi300 is a blue-enhanced general-purpose version.
Key Features
- Two versions: DSi200 UV-enhanced (200–1100 nm) and DSi300 blue-enhanced (350–1100 nm)
- 100 mm² active area (Ø11.28 mm) on both models
- Housing with BNC signal connector and flange for direct mounting on Omni-λ series monochromator slits
- Current output; the ZAMP I-V transimpedance amplifier is recommended ahead of an oscilloscope or lock-in amplifier
- Connects to the DCS300PA data acquisition system without a separate preamplifier, as amplification is built in; with the DCS103 the ZAMP is recommended
- NEP of 4.5×10⁻¹³ W/√Hz (DSi200) and 2.0×10⁻¹³ W/√Hz (DSi300)
Typical Applications
- UV, visible and NIR measurements with scanning monochromators
- Transmission, reflection and absorption spectroscopy
- Spectral characterization of light sources
- Lock-in detection of chopped optical signals
Model Overview
| Model | Type | Spectral Range (nm) | Peak Wavelength (nm) | Peak Responsivity (A/W) | Rise Time (µs) | Shunt Resistance (MΩ) | NEP (W/√Hz) | Junction Capacitance at 0 V (pF) | Max. Operating Current at 0 V (mA) |
|---|---|---|---|---|---|---|---|---|---|
| DSi200 | UV-enhanced | 200–1100 | 820 | 0.52 | 5.9 | 10 (min. 5) | 4.5×10⁻¹³ | 4500 | 0.1 |
| DSi300 | Blue-enhanced | 350–1100 | 970 | 0.60 (min. 0.55) | 2 | min. 10 | 2.0×10⁻¹³ | 8800 | 10.0 |
Related Products
- DInGaAs Series — Room-Temperature InGaAs Detectors
- DInGaAs-TE Series — TE-Cooled InGaAs Detectors
- DField-NIR Series — InGaAs Linear Array Detectors
Browse all: Spectroscopy Detectors · Photodetection
Models: DSi200, DSi300 · Contact WaveQuanta for a quote, configuration advice and lead time.
| Detector Type | Silicon photodiode |
| Active Area | 100 mm² (Ø11.28 mm) |
| Spectral Range | 200–1100 nm (DSi200); 350–1100 nm (DSi300) |
| Responsivity at 254 nm (DSi200) | 0.14 A/W (min. 0.09 A/W) |
| Responsivity at 410 nm (DSi300) | 0.20 A/W (min. 0.15 A/W) |
| Signal Output | Current |
| Output Signal Polarity | P (positive) |
| Connector | BNC |
| Mounting | Flange for the slit assembly of Omni-λ series monochromators |
| Recommended Preamplifier | ZAMP I-V transimpedance amplifier |
| Operating Temperature | -10 to +60 °C |
| Storage Temperature | -20 to +70 °C |
Product Family: Spectroscopy Detectors (9 variants)
| Product | SKU | Size | Clear Aperture | Operating Wavelength | |
|---|---|---|---|---|---|
| DField-VS-A4 TE-Cooled Spectroscopy CCD, -60 °C Cooling, 30.7 mm Wide Sensor |
DField-VS-A4
| — | — | — | Contact |
| PMTH Series Room-Temperature Photomultiplier Detectors, Side-Window PMTs |
PMTH Series
| — | — | — | Contact |
| DMCT Series Liquid-Nitrogen-Cooled MCT Detectors, 2–22 µm Spectral Range |
DMCT Series
| — | — | — | Contact |
| DInSb Series Liquid-Nitrogen-Cooled InSb Detectors, 1–5.5 µm |
DInSb Series
| — | — | — | Contact |
| DPbS Series Room-Temperature PbS Detectors, 0.8–3.2 µm, Built-in Preamplifier |
DPbS Series
| — | — | — | Contact |
| DField-NIR Series InGaAs Linear Array Detectors, 850–2200 nm Coverage |
DField-NIR Series
| — | — | — | Contact |
| DInGaAs-TE Series TE-Cooled InGaAs Detectors, 800–2600 nm, -40 °C |
DInGaAs-TE Series
| — | — | — | Contact |
| DInGaAs Series Room-Temperature InGaAs Detectors, 800–2600 nm, Ø3 mm |
DInGaAs Series
| — | — | — | Contact |
| DSi Series Silicon Photodetectors, 200–1100 nm, 100 mm² Active Area Current |
DSi Series
| — | — | — |






