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DSi Series Silicon Photodetectors, 200–1100 nm, 100 mm² Active Area
DSi SeriesContact for pricing
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Silicon photodiode detectors that mount directly on monochromator slits for UV–NIR measurements at good light levels.
DSi series detectors are rugged silicon photodiodes for measurements where a reasonable amount of light is collected. Each detector sits in a housing with a BNC signal connector and a mounting flange that attaches directly to the slit assembly of Omni-λ series monochromators. The DSi200 is UV-enhanced for 200–1100 nm, while the DSi300 is a blue-enhanced general-purpose version.
Key Features
- Two versions: DSi200 UV-enhanced (200–1100 nm) and DSi300 blue-enhanced (350–1100 nm)
- 100 mm² active area (Ø11.28 mm) on both models
- Housing with BNC signal connector and flange for direct mounting on Omni-λ series monochromator slits
- Current output; the ZAMP I-V transimpedance amplifier is recommended ahead of an oscilloscope or lock-in amplifier
- Connects to the DCS300PA data acquisition system without a separate preamplifier, as amplification is built in; with the DCS103 the ZAMP is recommended
- NEP of 4.5×10⁻¹³ W/√Hz (DSi200) and 2.0×10⁻¹³ W/√Hz (DSi300)
Typical Applications
- UV, visible and NIR measurements with scanning monochromators
- Transmission, reflection and absorption spectroscopy
- Spectral characterization of light sources
- Lock-in detection of chopped optical signals
Model Overview
| Model | Type | Spectral Range (nm) | Peak Wavelength (nm) | Peak Responsivity (A/W) | Rise Time (µs) | Shunt Resistance (MΩ) | NEP (W/√Hz) | Junction Capacitance at 0 V (pF) | Max. Operating Current at 0 V (mA) |
|---|---|---|---|---|---|---|---|---|---|
| DSi200 | UV-enhanced | 200–1100 | 820 | 0.52 | 5.9 | 10 (min. 5) | 4.5×10⁻¹³ | 4500 | 0.1 |
| DSi300 | Blue-enhanced | 350–1100 | 970 | 0.60 (min. 0.55) | 2 | min. 10 | 2.0×10⁻¹³ | 8800 | 10.0 |
Related Products
- DInGaAs Series — Room-Temperature InGaAs Detectors
- DInGaAs-TE Series — TE-Cooled InGaAs Detectors
- DField-NIR Series — InGaAs Linear Array Detectors
Browse all: Spectroscopy Detectors · Photodetection
Models: DSi200, DSi300 · Contact WaveQuanta for a quote, configuration advice and lead time.
| Detector Type | Silicon photodiode |
| Active Area | 100 mm² (Ø11.28 mm) |
| Spectral Range | 200–1100 nm (DSi200); 350–1100 nm (DSi300) |
| Responsivity at 254 nm (DSi200) | 0.14 A/W (min. 0.09 A/W) |
| Responsivity at 410 nm (DSi300) | 0.20 A/W (min. 0.15 A/W) |
| Signal Output | Current |
| Output Signal Polarity | P (positive) |
| Connector | BNC |
| Mounting | Flange for the slit assembly of Omni-λ series monochromators |
| Recommended Preamplifier | ZAMP I-V transimpedance amplifier |
| Operating Temperature | -10 to +60 °C |
| Storage Temperature | -20 to +70 °C |
No CAD drawings available for this product.
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Product Family: Spectroscopy Detectors (9 variants)
| Product | SKU | Size | Clear Aperture | Operating Wavelength | |
|---|---|---|---|---|---|
| DField-VS-A4 TE-Cooled Spectroscopy CCD, -60 °C Cooling, 30.7 mm Wide Sensor |
DField-VS-A4
| — | — | — | Contact |
| PMTH Series Room-Temperature Photomultiplier Detectors, Side-Window PMTs |
PMTH Series
| — | — | — | Contact |
| DMCT Series Liquid-Nitrogen-Cooled MCT Detectors, 2–22 µm Spectral Range |
DMCT Series
| — | — | — | Contact |
| DInSb Series Liquid-Nitrogen-Cooled InSb Detectors, 1–5.5 µm |
DInSb Series
| — | — | — | Contact |
| DPbS Series Room-Temperature PbS Detectors, 0.8–3.2 µm, Built-in Preamplifier |
DPbS Series
| — | — | — | Contact |
| DField-NIR Series InGaAs Linear Array Detectors, 850–2200 nm Coverage |
DField-NIR Series
| — | — | — | Contact |
| DInGaAs-TE Series TE-Cooled InGaAs Detectors, 800–2600 nm, -40 °C |
DInGaAs-TE Series
| — | — | — | Contact |
| DInGaAs Series Room-Temperature InGaAs Detectors, 800–2600 nm, Ø3 mm |
DInGaAs Series
| — | — | — | Contact |
| DSi Series Silicon Photodetectors, 200–1100 nm, 100 mm² Active Area Current |
DSi Series
| — | — | — |