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Variable Gain Silicon Avalanche Photodetectors PD-SAF-400A
PD-SAF-400A$1,197.07
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The LBTEK Avalanche Photodetector PD-SAF-400A combines a high-sensitivity Si avalanche photodiode, capable of detecting optical signals from DC to 385 MHz. The silicon avalanche photodetector features a photosensitive detection area with a diameter of 0.2 mm and achieves a peak spectral photoelectric conversion gain of up to 4.2×10e5 V/W. Additionally, the silicon avalanche photodetector allows continuous adjustment of the APD's M multiplication factor, enabling a gain adjustment range of 10-100 times to meet the vast majority of customer testing requirements. Furthermore, the silicon avalanche photodetector includes a special control circuit for temperature compensation of the M factor, ensuring gain temperature stability ≤1.5%. Note: The avalanche photodetector does not support hot-plugging; the detector must be connected to the power supply before powering on.
Key Features
- Spectral Range: 400-1000 nm
- Gain Continuously Adjustable: 10-100
- Gain Temperature Stability: ±1.5%
Application
Detector mounted on the base
| Spectral response range | 400-1000 nm |
| Photosensitive surface diameter | 0.2 mm |
| Attribute 2199 | DC-385 MHz |
| Attribute 2201 | 4.8×10<sup>5</sup> V/W |
| Temperature stability with gain | ±1.5% |
| Attribute 2231 | 0.18 pW/√Hz (DC-100 MHz) |
| Operating Temperature | -40~+70 ℃ |
| Operating Temperature | 0~+40 ℃ |
| Dimensions | 72.7×65×38.5 mm |
| Transimpedance Gain | 5 kV/A(50 Ω) 10 kV/A(High-Z) |
| Attribute 2241 | 8 μW @780 nm,M=100 80 μW @780 nm,M=10 |
| Attribute 2243 | 6.0 nW |
| Output Bias Voltage | 2.0 V (50 Ω) 4.1 V (High-Z) |
| Detector Type | Silicon-Avalanche Photomultiplier |
| Power Supply | ±9 V@166 mA; 120 V@1 mA (100 VAC, 120 VAC or 230 VAC) |
| Responsivity | 48 A/W @780 nm @M=100 |
| Maximum Optical Power | 1 mW |
| Attribute 2253 | 50 Ω BNC |
| Gain adjustment range (M) | 10-100 |
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